9014B 9014B Silicon NPN Epitaxial Transistor Description :The 9014B is designed for use in pre-amplifier of low level and low noise Features: Excellent hFE Linearity Complementary to 9015B Chip Appearance
Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 350umx350um 21020um 110umx110um 100umx100um Al Au(As) 40um 6 inch
Electrical Characteristics( Ta=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=40V, IE=0 VEB=5V, IC=0 IC=0.1mA, IC=1mA, IE=0.1mA, VCE=5V, IC=1mA IC=100mA,IB=5mA 50 45 5.0 150 600 0.30 V Min Max 0.1 0.1 Unit uA uA V V V
May.2004
Version :0.0
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